Microchip Technology APT80GA90LD40 IGBT晶体管 IGBT PT MOS 8 组合 900 V 80 A TO-264

Technology: Si

Unit Weight: 38 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 625 W

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 900 V

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 145 A