Microchip Technology APT80GA90S IGBT晶体管 IGBT PT MOS 8 单管 900 V 80 A TO-268

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 625 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 900 V

Continuous Collector Current Ic Max: 239 A

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 145 A