Microchip Technology APTGLQ200HR120G IGBT模块 PM-IGBT-TFS-SP6C

Technology: Si

Unit Weight: 110 g

Configuration: Dual Common Emitter

Mounting Style: Screw Mount

Pd - Power Dissipation: 1 kW, 340 W

Gate-Emitter Leakage Current: 480 nA, 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 100 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV, 600 V

Collector-Emitter Saturation Voltage: 2.05 V, 1.5 V

Continuous Collector Current at 25 C: 300 A, 150 A