Microchip Technology APTGLQ80HR120CT3G IGBT模块 PM-IGBT-TFS-SBD-SP3F

Technology: Si

Configuration: Dual Common Emitter

Pd - Power Dissipation: 500 W, 250 W

Gate-Emitter Leakage Current: 240 nA, 600 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 100 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV, 600 V

Collector-Emitter Saturation Voltage: 2.05 V, 1.5 V

Continuous Collector Current at 25 C: 150 A, 100 A