Microchip Technology DN2535N3-G-P013 MOSFETs N沟道MOSFET 350V 0.12A 3引脚 TO-92

Technology: Si

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Id - Continuous Drain Current: 120 mA

Rds On - Drain-Source Resistance: 25 Ohms

Vds - Drain-Source Breakdown Voltage: 350 V