Microchip Technology DN3765K4-G MOSFETs N沟道耗尽型垂直DMOS场效应管

Width: 6.1 mm

Height: 2.39 mm

Length: 6.73 mm

Fall Time: 100 ns

Rise Time: 75 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Depletion

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 50 ns

Typical Turn-Off Delay Time: 75 ns

Id - Continuous Drain Current: 300 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 8 Ohms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V