Microchip Technology ICPB1020-1-110I 氮化镓场效应晶体管 DC-14 GHz 100W 离散氮化镓高电子迁移率晶体管

Technology: GaN

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 112 W

Maximum Drain Gate Voltage: 80 V

Maximum Operating Frequency: 14 GHz

Minimum Operating Frequency: 0 Hz