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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 360 mW
Gate-Source Cutoff Voltage: 6 VDC
Maximum Drain Gate Voltage: 30 V
Drain-Source Current at Vgs=0: 10 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
Rds On - Drain-Source Resistance: 40 Ohms
Vgs - Gate-Source Breakdown Voltage: 30 V
Vds - Drain-Source Breakdown Voltage: 30 V
