Microchip Technology MSC060SMA070S SiC MOSFETS MOSFET 硅碳化物 700 V 60 mOhm TO-268

Technology: SiC

Unit Weight: 6.200 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 56 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 130 W

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Id - Continuous Drain Current: 37 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 69 mOhms

Vds - Drain-Source Breakdown Voltage: 700 V

Vgs th - Gate-Source Threshold Voltage: 1.9 V