Microchip Technology MSC080SMA120B4 SiC MOSFETS MOSFET 硅碳化物 1200 V 80 mOhm TO-247-4

Technology: SiC

Unit Weight: 6 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 64 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 200 W

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Id - Continuous Drain Current: 37 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 80 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2.8 V