Microchip Technology MSC080SMA120J 功率MOSFET MOSFET 碳化硅 1200 V 80 mOhm SOT-227

Technology: SiC

Unit Weight: 47.178 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 200 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Id - Continuous Drain Current: 37 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 100 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV