Microchip Technology MSCGLQ75X065CTYZBNMG IGBT模块 PM-IGBT-SBD-6HPD

Technology: SiC

Configuration: 3-Phase Bridge

Mounting Style: Screw Mount

Pd - Power Dissipation: 400 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 100 A