Microchip Technology MSCSM120AM11T3AG 相腿SiC MOSFET功率模块 PM-MOSFET-SIC-SP3F

Fall Time: 25 ns

Rise Time: 30 ns

Technology: SiC

Configuration: Dual

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.067 kW

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 50 ns

Id - Continuous Drain Current: 254 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 10.4 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V