Microchip Technology MSCSM170AM029CT6LIAG MOSFET / SiC SBD PM-MOSFET-SIC-SBD-SP6LI

Fall Time: 44 ns

Rise Time: 52 ns

Technology: SiC

Mounting Style: Screw Mount

Vf - Forward Voltage: 1.5 V

Pd - Power Dissipation: 3 kW

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Typical Turn-On Delay Time: 65 ns

Typical Turn-Off Delay Time: 148 ns

Id - Continuous Drain Current: 676 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 2.9 mOhms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V