Microchip Technology TN2106K1-G 场效应管 60V 2.5欧姆

Width: 1.3 mm

Height: 0.95 mm

Length: 2.9 mm

Fall Time: 5 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3 ns

Typical Turn-Off Delay Time: 6 ns

Id - Continuous Drain Current: 280 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 150 mS

Rds On - Drain-Source Resistance: 2.5 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 600 mV