Microchip EDI88512C100CI SRAM芯片 异步 单电压5V 4M位 512K x 8 100纳秒 32针 SBCDIP
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ModelEDI88512C100CI
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Density: 4 Mbit
Package: 32SBCDIP
Mounting: Through Hole
Rad Hard: No
Pin Count: 32
No. of Pins: 32
Timing Type: Asynchronous
Memory Density: 4 Mbit
Number of Ports: 1
Number of Words: 512 kWords
Screening Level: Industrial
Supplier Package: SBCDIP
Address Bus Width: 19 Bit
Product Dimensions: 41.05 x 15.24 x 2.41 mm
Supply Voltage Max: 5.5 V
Supply Voltage Min: 4.5 V
Supply Voltage Nom: 5 V
Number of I/O Lines: 8 Bit
Operating Temperature: -40 to 85 °C
Number of Bits per Word: 8 Bit
Maximum Operating Current: 75 mA
Operating Temperature Max: 85 °C
Operating Temperature Min: -40 °C
Maximum Random Access Time: 100 ns
Typical Operating Supply Voltage: 5.0000 V
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