Microchip LND150K1-G 功率MOSFET，N沟道，500伏，13毫安，850欧姆，TO-236AB，表面贴装

No. of Pins: 3

Channel Type: N Channel

Power Dissipation: 360

Transistor Mounting: Surface Mount

Transistor Case Style: SOT-23

Drain Source Voltage Vds: 500

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 13

Drain Source On State Resistance: 1

Gate Source Threshold Voltage Max: 3

Datasheet