Microchip W3E64M72S-266SBI DRAM模块 DDR SDRAM 512兆字节

Package: 219BGA

Mounting: Surface Mount

Rad Hard: No

Pin Count: 219

Lead Finish: Tin-Lead

Chip Density: 512 Mbit

Organization: 64Mx72

Sub-Category: DDR SDRAM

Main Category: DRAM Module

Total Density: 512 MB

Data Bus Width: 72 Bit

Memory Density: 4 Gbit

Screening Level: Industrial

Supplier Package: BGA

Chip Package Type: PBGA

Maximum Clock Rate: 266 MHz

Product Dimensions: 32.1 x 25.1 x 2.96 mm

Supply Voltage Max: 2.7 V

Supply Voltage Min: 2.3 V

Supply Voltage Nom: 2.5 V

Max Processing Temp: 225

Operating Temperature: -40 to 85 °C

Maximum Operating Current: 3.645 A

Number of Chip per Module: 9

Operating Temperature Max: 85 °C

Operating Temperature Min: -40 °C

Maximum Random Access Time: 0.75 ns

Typical Operating Supply Voltage: 2.5000 V

Datasheet