Microchip WF1M32B-150G2TM3 NOR闪存并行3.3V 32Mbit 1M x 32bit 150ns

Density: 32 MB

Rad Hard: No

Cell Type: NOR

Boot Block: Yes

Interfaces: Parallel

Access Time: 150 ns

ECC Support: No

No. of Pins: 68

Architecture: Sectored

Interface Type: Parallel

Memory Density: 32 Mbit

OE Access Time: 55 ns

Number of Words: 1 MWords

Program Current: 140 mA

Screening Level: Military

Address Bus Width: 20 Bit

Block Organization: Asymmetrical

Maximum Erase Time: 15/Sector s

Supply Voltage Max: 3.6 V

Supply Voltage Min: 3 V

Supply Voltage Nom: 3.3 V

Clock Frequency Max: 5 MHz

Programming Voltage: 3.3 V

Operating Temperature: -55 to 125 °C

Location Of Boot Block: Bottom

Number of Bits per Word: 32 Bit

Maximum Programming Time: 50000/Chip ms

Maximum Operating Current: 120 mA

Operating Temperature Max: 125 °C

Operating Temperature Min: -55 °C

Maximum Random Access Time: 150 ns

Simultaneous Read/Write Support: No

Typical Operating Supply Voltage: 3.3000 V

Erase Suspend/Resume Modes Support: No

Datasheet