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Micron MT28EW128ABA1HJS-0SIT TR NOR闪存并行3.3V 128Mbit 16M/8M X 8bit/16bit 70ns 56针TSOP T/R

ModelMT28EW128ABA1HJS-0SIT TR
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Density: 128 MB

Package: 56TSOP

Mounting: Surface Mount

Rad Hard: 0

Cell Type: NOR

Pin Count: 56

Boot Block: Yes

Access Time: 95 ns

ECC Support: No

Lead Finish: Matte Tin

No. of Pins: 56

Architecture: Sectored

Interface Type: Parallel

Memory Density: 128 Mbit

OE Access Time: 25 ns

Number of Words: 16, 8 MWords

Program Current: 35 mA

Screening Level: Industrial

Supplier Package: TSOP

Address Bus Width: 23, 24 Bit

Page Read Current: 12 mA

Block Organization: Symmetrical

Maximum Erase Time: 26/Chip s

Product Dimensions: 14 x 18.4 x 1.05 mm

Supply Voltage Max: 3.6 V

Supply Voltage Min: 2.7 V

Supply Voltage Nom: 3 V

Max Processing Temp: 260 °C

Programming Voltage: 2.7 to 3.6 V

Operating Temperature: -40 to 85 °C

Location Of Boot Block: Top

Number of Bits per Word: 8, 16 Bit

Maximum Page Access Time: 20 ns

Maximum Programming Time: 0.2/Word ms

Maximum Operating Current: 31 mA

Operating Temperature Max: 85 °C

Operating Temperature Min: -40 °C

Maximum Random Access Time: 70 ns

Simultaneous Read/Write Support: No

Typical Operating Supply Voltage: 3.3000 V

Erase Suspend/Resume Modes Support: Yes

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