Microsemi APT22F100J Trans MOSFET N-CH Si 1KV 23A 4-Pin SOT-227

Type: Power MOSFET

Vgs (Max): 30V

Gate Charge (Qg): 305nC

Power consumption: 545W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 1000V

Continuous drain current: 23A

Input Capacitance (Ciss): 9835pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 380mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet