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Type: Power MOSFET
Vgs(th): 4 V
Gate Charge (Qg): 225nC
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 500V
Continuous drain current: 26A
Input Capacitance (Ciss): 4440pF
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 200mOhm