Microsemi APT80F60J Trans MOSFET N-CH Si 600V 84A 4-Pin SOT-227

Type: Power MOSFET

Vgs(th): 5 V

Vgs (Max): 30V

Gate Charge (Qg): 598nC

Power consumption: 961W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 600V

Continuous drain current: 84A

Input Capacitance (Ciss): 23994pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 55mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet