Microsemi APTM20DAM05G Trans MOSFET N-CH 200V 317A 5-Pin Case SP-6

Type: Power MOSFET

Vgs(th): 5 V

Vgs (Max): 30V

Gate Charge (Qg): 448nC

Power consumption: 1136W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 200V

Continuous drain current: 317A

Input Capacitance (Ciss): 27400pF

Operating temperature range: -40 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 6mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet