Microsemi APTM20UM04SAG Trans MOSFET N-CH 200V 417A 4-Pin Case SP-6

Type: Power MOSFET

Vgs(th): 5 V

Vgs (Max): 30V

Gate Charge (Qg): 560nC

Power consumption: 1560W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 200V

Continuous drain current: 417A

Input Capacitance (Ciss): 28800pF

Operating temperature range: -40 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 5mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet