Microsemi Jan2N5302 双极型晶体管 60V 30A 5W NPN 功率双极型晶体管 THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 5 W

DC Current Gain hFE Max: 60

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 30 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 750 mV