Microsemi JANS2N3421 双极型晶体管 BJTs 80V 3A 1W 功率 BJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 5 W

DC Current Gain hFE Max: 120 at 1 A, 2 V

Emitter- Base Voltage VEBO: 8 V

Collector- Base Voltage VCBO: 125 V

Continuous Collector Current: 3 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 500 mV