Microsemi JANSR2N7584T1 MOSFETs RH MOSFET 200V TO-254AA

Fall Time: 30 ns

Rise Time: 125 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 240 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 208 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 40 ns

Typical Turn-Off Delay Time: 85 ns

Id - Continuous Drain Current: 45 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 40 S

Rds On - Drain-Source Resistance: 88 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 4 V