Microsemi Jantx2N2432A 双极型晶体管 - 小信号双极型晶体管

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 600 mW

DC Current Gain hFE Max: 400

Emitter- Base Voltage VEBO: 18 V

Collector- Base Voltage VCBO: 45 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 2

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 150 uV