Microsemi Jantx2N3772 双极型晶体管 60V 20A 6W 功率 BJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 6 W

DC Current Gain hFE Max: 60

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 20 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 15

Collector- Emitter Voltage VCEO Max: 60 V