Microsemi Jantx2N3868 双极型晶体管 BJTs 60V 3mA 1W 功率 BJT THT

Technology: Si

Unit Weight: 9.210 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 150 at 1.5 A, 2 VDC

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 3 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30 at 1.5 A, 2 VDC

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 500 mV