Microsemi Jantxv2N3442 双极晶体管 BJTs 140V 10A 6W NPN 功率晶体管 THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 6 W

DC Current Gain hFE Max: 70

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 160 V

Continuous Collector Current: 10 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 140 V

Collector-Emitter Saturation Voltage: 1 V