Mini-Circuits TAV1-331NM+ 射频MOSFET晶体管表面贴装低噪声放大器，10 MHz - 4 GHz

Gain: 12.3 dB

Technology: GaAs

Output Power: 21.5 dBm

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Operating Frequency: 10 MHz to 4 GHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 400 mW

Vgs - Gate-Source Voltage: - 690 mV

Id - Continuous Drain Current: 60 mA

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 282 mS

Vds - Drain-Source Breakdown Voltage: 4 V