Nexperia 2N7002KQBZ MOSFETs 60 V，单N沟槽MOSFET

Fall Time: 3 ns

Rise Time: 1 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: N-Channel Trench MOSFET

Qg - Gate Charge: 610 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 4.2 W

Vgs - Gate-Source Voltage: - 16 V, + 16 V

Typical Turn-On Delay Time: 1 ns

Typical Turn-Off Delay Time: 6 ns

Id - Continuous Drain Current: 720 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.1 S

Rds On - Drain-Source Resistance: 850 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V