Nexperia 2N7002NXBKR MOSFETs 60 V，360 mA N沟槽型场效应管

Fall Time: 2.9 ns

Rise Time: 4.3 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 1 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 400 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4.7 ns

Typical Turn-Off Delay Time: 6.9 ns

Id - Continuous Drain Current: 270 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.8 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V