Nexperia 2N7002PSZ MOSFETs 60 V，350 mA 双N沟槽MOSFET

Fall Time: 5 ns

Rise Time: 4 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 800 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 420 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3 ns

Typical Turn-Off Delay Time: 10 ns

Id - Continuous Drain Current: 320 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 400 mS

Rds On - Drain-Source Resistance: 1.6 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V