Nexperia BC856BQB-QZ 双极型晶体管 BJTs - 65 V，100 mA PNP 通用晶体管

Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 420 mW

DC Current Gain hFE Max: 475 at - 2 mA, - 5 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: - 100 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 220 at - 2 mA, - 5 V

Collector- Emitter Voltage VCEO Max: 65 V

Collector-Emitter Saturation Voltage: 650 mV