Nexperia BCP53-16HX 双极型晶体管 BJTs - 80 V，1 A PNP 中功率晶体管

Technology: Si

Unit Weight: 105.564 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2.2 W

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 500 mV