Nexperia BCP68,115 双极晶体管 BJTs - 20 V，2 A NPN 中功率晶体管

Width: 3.7 mm

Height: 1.7 mm

Length: 6.7 mm

Technology: Si

Unit Weight: 190 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.35 W

DC Current Gain hFE Max: 50 at 5 mA, 10 V

Gain Bandwidth Product fT: 170 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 32 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 50 at 5 mA, 10 V, 85 at 500 mA, 1 V, 60 at 1 A, 1 V, 40 at 2 A, 1 V

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 500 mV