Nexperia BSH207,135 BSH207/SOT457/SC-74

Type: Power MOSFET

Vgs(th): 0.6V

Vgs (Max): 8V

Gate Charge (Qg): 8.8nC

Power consumption: 417mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 12V

Continuous drain current: 1.52A

Input Capacitance (Ciss): 500pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 120mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V

Datasheet