Nexperia BSP19-QX 双极晶体管 P沟道垂直D-MOS中级场效应管

Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.2 W

Gain Bandwidth Product fT: 70 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 400 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40 at 20 mA, 10 V

Collector- Emitter Voltage VCEO Max: 350 V

Collector-Emitter Saturation Voltage: 500 mV