Nexperia BSP220,115 MOSFETs P沟道垂直D-MOS中级场效应管

Technology: Si

Unit Weight: 250 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 225 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Rds On - Drain-Source Resistance: 12 Ohms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 2.8 V