Nexperia BSS138BKSH MOSFETs 60 V，360 mA N沟槽型场效应管

Fall Time: 20 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 5.469 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 700 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 310 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 38 ns

Id - Continuous Drain Current: 320 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 700 mS

Rds On - Drain-Source Resistance: 1.6 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 480 mV