Nexperia BSS84AKQBZ MOSFETs 50 V，160 mA 双P沟槽MOSFET

Fall Time: 22 ns

Rise Time: 9 ns

Technology: Si

Channel Mode: Enhancement

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 400 pC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 960 mW

Vgs - Gate-Source Voltage: - 20 V, + 12 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 40 ns

Id - Continuous Drain Current: 270 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 7.5 Ohms

Vds - Drain-Source Breakdown Voltage: 50 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V