Nexperia BSS84AKW,115 MOSFET 200 V，N沟道垂直D-MOS晶体管

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 350 pC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 310 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 150 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 7.5 Ohms

Vds - Drain-Source Breakdown Voltage: 50 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V