Nexperia BST51,135 达林顿晶体管 NPN 达林顿晶体管

Unit Weight: 40.400 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.3 W

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 1000 at 150 mA, 10 V

Maximum Collector Cut-off Current: 50 nA

Collector- Emitter Voltage VCEO Max: 60 V