Nexperia BUK6M61-60PX MOSFET 30 V，P沟槽型P沟道MOSFET

Rise Time: 6 ns

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Polarity: P-Channel

Pd - Power Dissipation: 99 W

Vgs - Gate-Source Voltage: - 2 V

Id - Continuous Drain Current: 27 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 100 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.7 V