Nexperia BUK9K12-60EX MOSFET 双通道N沟道 80 V，12 mOhm 逻辑电平 MOSFET，封装为LFPAK56D

Fall Time: 25.3 ns, 25.3 ns

Rise Time: 28 ns, 28 ns

Technology: Si

Unit Weight: 112.200 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 24.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 68 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 15.1 ns, 15.1 ns

Typical Turn-Off Delay Time: 31.5 ns, 31.5 ns

Id - Continuous Drain Current: 35 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 9.5 mOhms, 9.5 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.4 V