Nexperia BUK9K20-80EX MOSFET 双通道 N 沟道 80 V，22 毫欧 逻辑电平 MOSFET

Fall Time: 22.7 ns

Rise Time: 25.8 ns

Technology: Si

Unit Weight: 112.200 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 25.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, NPN

Pd - Power Dissipation: 68 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 14.6 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 23 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 14.2 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 1.7 V