Nexperia BUK9K25-40EX MOSFET 双通道 N 沟道 40 V，29 mOhm 逻辑电平 MOSFET，采用 LFPAK56D 封装，使用重复雪崩技术

Fall Time: 8.9 ns, 8.9 ns

Rise Time: 9.2 ns, 9.2 ns

Technology: Si

Unit Weight: 112.200 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 6.3 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 32 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 6.2 ns, 6.2 ns

Typical Turn-Off Delay Time: 10.8 ns, 10.8 ns

Id - Continuous Drain Current: 18.2 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 19 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.4 V